Professional-Grade Speed with Enhanced Storage Capacity

The SAMSUNG 512GB SSD NVME HARD DISK delivers exceptional performance through its advanced PCIe Gen4 interface and optimized controller architecture. With read speeds reaching up to 7,000MB/s and write speeds of 5,100MB/s, this SAMSUNG SSD transforms system responsiveness and file handling capabilities. The proprietary V-NAND technology utilizes vertical cell stacking to achieve higher density, improved endurance, and better power efficiency compared to conventional storage solutions.

Reliability forms the foundation of the SAMSUNG 512GB SSD NVME HARD DISK experience. Engineered with no moving parts, this drive eliminates mechanical failures while operating silently even under heavy workloads. Additionally, the integrated thermal control technology prevents performance throttling during intensive operations. The SAMSUNG 512GB SSD NVME HARD DISK balances substantial storage capacity with breakthrough speed, making it an ideal solution for users who require both performance and space for their expanding digital libraries.

Ideal For:

• Creative Professionals – The SAMSUNG 512GB SSD NVME HARD DISK provides ample space for large project files while delivering the speed needed for smooth editing of high-resolution photos, 4K videos, and complex audio productions without workflow interruptions.
• Performance-Focused Gamers – With storage capacity for multiple AAA game installations and ultra-fast loading times, the SAMSUNG 512GB SSD NVME HARD DISK enhances gaming experiences by virtually eliminating wait times and enabling instant game switching.
• Productivity-Driven Professionals – The SAMSUNG 512GB SSD NVME HARD DISK’s combination of speed and capacity supports multiple virtual machines, large datasets, and resource-intensive applications, boosting overall system responsiveness during multitasking scenarios.

Technical Specifications

• Form factor: M.2 2280 (80mm length)
• Interface: PCIe Gen4 x4, NVMe 1.4
• Controller: Samsung Phoenix
• NAND Flash: Samsung V-NAND 3-bit MLC
• DRAM Cache: 1GB LPDDR4
• Sequential read: Up to 7,000 MB/s
• Sequential write: Up to 5,100 MB/s

Performance Features

• Random read (4K, QD32): Up to 1,000,000 IOPS
• Random write (4K, QD32): Up to 870,000 IOPS
• Total bytes written (TBW): 600TB
• Mean time between failures: 1.5 million hours
• Dynamic Thermal Guard protection
• Hardware AES 256-bit encryption

Power & Efficiency

• Average power consumption: 6.2W (active), 35mW (idle)
• Peak power consumption: 8.8W
• Device sleep mode support
• Thermal throttling protection
• Power management: APST, ASPM, L1.2
• Operating temperature: 0°C to 70°C

Software & Support

• Samsung Magician software compatibility
• Firmware update support
• S.M.A.R.T. monitoring
• Trim command support
• 5-year limited warranty
• Data migration software included