SAMSUNG 256GB SSD NVME HARD DISK

Lightning-Fast Performance with Reliable Storage

The SAMSUNG 256GB SSD NVME HARD DISK delivers exceptional speed through its PCIe Gen4 interface and advanced controller architecture. Featuring read speeds up to 7,000MB/s and write speeds reaching 5,000MB/s, this SAMSUNG SSD dramatically reduces load times for applications and large file transfers. The proprietary V-NAND technology stacks memory cells vertically, achieving higher density and improved reliability compared to traditional 2D NAND configurations.

Efficiency defines the SAMSUNG 256GB SSD NVME HARD DISK experience beyond raw speed metrics. With significantly lower power consumption than mechanical drives, this SSD extends battery life in portable devices while generating minimal heat during intensive operations. Furthermore, the absence of moving parts eliminates mechanical failures and provides silent operation. The SAMSUNG 256GB SSD NVME HARD DISK balances cutting-edge performance with practical reliability, making it an ideal storage solution for both professional workstations and everyday computing needs.

Ideal For:

• Content Creators – The SAMSUNG 256GB SSD NVME HARD DISK’s exceptional sequential read/write speeds accelerate video editing workflows and 3D rendering processes, minimizing wait times when working with large media files and complex projects.
• PC Gaming Enthusiasts – With ultra-fast data access and minimal loading times, the SAMSUNG 256GB SSD NVME HARD DISK enhances gaming experiences by eliminating stuttering during texture streaming and reducing level loading screens to mere seconds.
• Professional Workstation Users – The SAMSUNG 256GB SSD NVME HARD DISK’s sustained performance and reliability support data-intensive applications like CAD/CAM software, database operations, and scientific computing where consistent high-speed storage access is critical.

Technical Specifications

• Form factor: M.2 2280 (80mm length)
• Interface: PCIe Gen4 x4, NVMe 1.4
• Controller: Samsung Phoenix
• NAND Flash: Samsung V-NAND 3-bit MLC
• DRAM Cache: 512MB LPDDR4
• Sequential read: Up to 7,000 MB/s
• Sequential write: Up to 5,000 MB/s

Performance Features

• Random read (4K, QD32): Up to 1,000,000 IOPS
• Random write (4K, QD32): Up to 850,000 IOPS
• Total bytes written (TBW): 300TB
• Mean time between failures: 1.5 million hours
• Dynamic Thermal Guard protection
• Hardware AES 256-bit encryption

Power & Efficiency

• Average power consumption: 5.9W (active), 35mW (idle)
• Peak power consumption: 8.5W
• Device sleep mode support
• Thermal throttling protection
• Power management: APST, ASPM, L1.2
• Operating temperature: 0°C to 70°C

Software & Support

• Samsung Magician software compatibility
• Firmware update support
• S.M.A.R.T. monitoring
• Trim command support
• 5-year limited warranty
• Data migration software included